JPH0241176B2 - - Google Patents

Info

Publication number
JPH0241176B2
JPH0241176B2 JP57133718A JP13371882A JPH0241176B2 JP H0241176 B2 JPH0241176 B2 JP H0241176B2 JP 57133718 A JP57133718 A JP 57133718A JP 13371882 A JP13371882 A JP 13371882A JP H0241176 B2 JPH0241176 B2 JP H0241176B2
Authority
JP
Japan
Prior art keywords
integrated circuit
mosfet
circuit device
cmos integrated
latch
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57133718A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5925261A (ja
Inventor
Noboru Myamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP57133718A priority Critical patent/JPS5925261A/ja
Publication of JPS5925261A publication Critical patent/JPS5925261A/ja
Publication of JPH0241176B2 publication Critical patent/JPH0241176B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/811—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using FETs as protective elements

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP57133718A 1982-08-02 1982-08-02 Ｃｍｏｓ集積回路装置 Granted JPS5925261A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57133718A JPS5925261A (ja) 1982-08-02 1982-08-02 Ｃｍｏｓ集積回路装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57133718A JPS5925261A (ja) 1982-08-02 1982-08-02 Ｃｍｏｓ集積回路装置

Publications (2)

Publication Number Publication Date
JPS5925261A JPS5925261A (ja) 1984-02-09
JPH0241176B2 true JPH0241176B2 (en]) 1990-09-14

Family

ID=15111276

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57133718A Granted JPS5925261A (ja) 1982-08-02 1982-08-02 Ｃｍｏｓ集積回路装置

Country Status (1)

Country Link
JP (1) JPS5925261A (en])

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6167952A (ja) * 1984-09-11 1986-04-08 Nec Corp Ｃｍｏｓ半導体装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57157558A (en) * 1981-03-23 1982-09-29 Fujitsu Ltd Complementary mis integrated circuit device

Also Published As

Publication number Publication date
JPS5925261A (ja) 1984-02-09

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